(Hong Kong)
Product Summary
The TCC3100-00X is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity class AB operation in VHF and band III television transmitters and transposers.
Parametrics
TCC3100-00X absolute maximum ratings: (1)VCBO, collector-base voltage: 65 V; (2)VCEO, collector-emitter voltage: 33 V; (3)VEBO, emitter-base voltage: 3.5 V; (4)IC, device current: 16 A; (5)PDISS, power dissipation: 150 W; (6)TJ, junction temperature: +200 °C; (7)TSTG, storage temperature: - 65 to +150 °C.
Features
TCC3100-00X features: (1)170 - 230 MHz; (2)28 Volts; (3)Class AB push pull designed for high power linear operation; (4)High saturated power capability; (5)Gold metallization diffused emitter ballast resistors; (6)Common emitter configuration pout = 100 W min with 110 dB gain.
Diagrams
