(Hong Kong)
Product Summary
The BSM50GD120DN2 is an IGBT power module.
Parametrics
BSM50GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, RGE = 20 kΩ VCGR: 1200 V; (3)Gate-emitter voltage, VGE: ± 20 V; (4)DC collector current, TC = 25 °C, IC: 72 A; TC = 80 °C, IC: 50 A; (5)Pulsed collector current, tp = 1 ms. TC = 25 °C, ICpuls: 144 A; TC = 80 °C, ICpuls: 100 A; (6)Power dissipation per IGBT, TC = 25 °C, Ptot: 350 W; (7)Chip temperature, T j: + 150 °C; (8)Storage temperature, Tstg: -55 to + 150 °C; (9)Thermal resistance, chip case, RthJC: ≤ 0.35 K/W; (10)Diode thermal resistance, chip case, RthJCD: ≤ 0.7 K/W; (11)Insulation test voltage, t = 1min. Vis: 2500 Vac; (12)Creepage distance: 16 mm; (13)Clearance: 11 mm.
Features
BSM50GD120DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
