Product Summary

The 1n1199rb is a silicon power rectifier.

Parametrics

1n1199rb absolute maximum ratings: (1)Peak reverse voltage: 50 V; (2)Average forward current IF(AV): 12Amps; (3)Maximum surge current IFSM: 250Amps; (4)Max I2t for fusing: 260 A2s; (5)Max peak forward voltage VFM: 1.2V; (6)Max peak reverse current IRM: 10μA VRRM, TJ = 25℃; (7)Max peak reverse current IRM: 1.0mA VRRM, TJ = 150℃; (8)Max Recommended operating frequency: 10kHz; (9)Storage temperature range TSTG: -65 to 200℃; (10)Operating junction temp range TJ: -65 to 200℃; (11)Maximum thermal resistance RθJC: 2.5℃/W; (12)Mounting torque: 25 to 30 inch pounds; (13)Weight: 16 ounces.

Features

1n1199rb features: (1)glass passivated die; (2)low forward voltage; (3)250A surge rating; (4)glass to metal seal construction; (5)VRRM to 1200V.

Diagrams

1n1199rb block diagram