(Hong Kong)
Product Summary
The 74HC1G04GW is a high-speed Si-gate CMOS device. The device provides the inverting buffer. The standard output currents are half the values compared to the 74HC1G04GW.
Parametrics
74HC1G04GW absolute maximum ratings: (1)supply voltage, VCC: -0.5 to +7.0 V; (2)input diode current VI < -0.5 V or VI > VCC + 0.5 V, IIK: ±20 mA; (3)output diode current VO < -0.5 V or VO > VCC + 0.5 V, IOK: ±20 mA; (4)output source or sink current -0.5 V < VO < VCC + 0.5 V, IO: ±12.5 mA; (5)VCC or GND current, ICC: ±25 mA; (6)storage temperature, Tstg: -65 to +150℃; (7)power dissipation per package for temperature range from -40 to +125℃, PD: 200 mW.
Features
74HC1G04GW features: (1)Wide supply voltage range from 2.0 to 6.0 V; (2)Symmetrical output impedance; (3)High noise immunity; (4)Low power dissipation; (5)Balanced propagation delays; (6)Very small 5 pins package; (7)Output capability: standard.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 74HC1G04GW,125 |
NXP Semiconductors |
Inverters INVERTER BUFFER PICOGATE |
Data Sheet |
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74HC1G04GW,165 |
NXP Semiconductors |
Inverters INVERTER |
Data Sheet |
Negotiable |
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74HC1G04GW-R |
NXP Semiconductors |
Inverters INVERTER |
Data Sheet |
Negotiable |
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