Product Summary
The BC850AMTF is an NPN epitaxial silicon transistor.
Parametrics
BC850AMTF absolute maximum ratings: (1)VCBO Collector-Base Voltage: 50 V; (2)VCEO Collector-Emitter Voltage: 45 V; (3)VEBO Emitter-Base Voltage: 5 V; (4)IC Collector Current (DC): 100 mA; (5)PC Collector Power Dissipation: 310 mW; (6)TJ Junction Temperature: 150 °C; (7)TSTG Storage Temperature: -65 ~ 150 °C.
Features
BC850AMTF features: (1)Switching and Amplifier Applications; (2)Suitable for automatic insertion in thick and thin-film circuits; (3)Low Noise: BC849, BC850; (4)Complement to BC856 ... BC860.
Diagrams
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![]() BC850AMTF |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) SOT-23 NPN GP AMP |
![]() Data Sheet |
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![]() BC850AMTF_Q |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) SOT-23 NPN GP AMP |
![]() Data Sheet |
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