Product Summary
The BCP53-10 is a PNP medium power transistor in a SOT223 plastic package. The applications of the BCP53-10 include Audio, telephony and automotive applications, Thick and thin-film circuits.
Parametrics
BCP53-10 absolute maximum ratings: (1)VCBO, collector-base voltage open emitter: -100 V; (2)VCEO, collector-emitter voltage open base: -80 V; (3)VEBO, emitter-base voltage open collector: -5 V; (4)IC, collector current (DC): -1 A; (5)ICM, peak collector current: -1.5 A; (6)IBM, peak base current: -0.2 A; (7)Ptot, total power dissipation Tamb ≤ 25℃; note 1: 1.3 W; (8)Tstg, storage temperature: -65 to +150℃; (9)Tj, junction temperature: 150℃; (10)Tamb, operating ambient temperature: -65 to +150℃.
Features
BCP53-10 features: (1)High current (max. 1 A); (2)Low voltage (max. 80 V); (3)Medium power (max. 1.3 W).
Diagrams
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![]() BCP53-10,135 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
![]() Data Sheet |
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![]() BCP53-10T1G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 1.5A 100V PNP |
![]() Data Sheet |
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![]() BCP53-10T1 |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 1.5A 100V PNP |
![]() Data Sheet |
![]() Negotiable |
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![]() BCP53-10,115 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
![]() Data Sheet |
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![]() BCP53-10 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BCP53-10 T/R |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
![]() Data Sheet |
![]() Negotiable |
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![]() BCP53-10 /T3 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
![]() Data Sheet |
![]() Negotiable |
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