Product Summary
The FDS9926A N-Channel 2.5V specified MOSFET useS Fairchild Semiconductor’s advanced PowerTrench process. The FDS9926A has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). Applications are (1)battery protection; (2)load switch; (3)power management.
Parametrics
FDS9926A absolute maximum ratings: (1)VDSS Drain-Source Voltage: 20 V; (2)VGSS Gate-Source Voltage: ±10 V; (3)ID Drain Current – Continuous: 6.5 A; (4)Power Dissipation for Dual Operation: 2W; (5)Power Dissipation for Single Operation: 1.6W; (6)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +150 °C.
Features
FDS9926A features: (1)6.5 A, 20 V. RDS(ON)= 0.030 Ω @ VGS = 4.5 V RDS(ON)= 0.043 Ω @ VGS = 2.5 V.; (2)Optimized for use in battery protection circuits; (3)±10 VGSS allows for wide operating voltage range; (4)Low gate charge.
Diagrams
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![]() FDS9926A |
![]() Fairchild Semiconductor |
![]() MOSFET SO-8 SGL N-CH 2.5V |
![]() Data Sheet |
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![]() FDS9926A_Q |
![]() Fairchild Semiconductor |
![]() MOSFET SO-8 SGL N-CH 2.5V |
![]() Data Sheet |
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