(Hong Kong)
Product Summary
The H20T120 is an Insulated Gate Bipolar Translator in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode.
Parametrics
H20T120 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)DC collector current, TC = 25℃, IC: 40A; TC = 100℃, IC: 20A; (3)Pulsed collector current, tp limited by Tjmax, ICpuls: 60A; (4)Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150℃: 60A; (5)Diode forward current, TC = 25℃, IF: 23A; TC = 100℃, IF: 13A; (6)Diode pulsed current, tp limited by Tjmax, IFpuls: 36A; (7)Diode surge non repetitive current, tp limited by Tjmax, TC = 25℃, tp = 10ms, sine halfwave, IFSM: 50A; TC = 25℃, tp ≤ 2.5μs, sine halfwave, IFSM: 130A; TC = 100℃, tp ≤ 2.5μs, sine halfwave, IFSM: 120A; (8)Gate-emitter voltage, VGE: ±20 V; (9)Short circuit withstand time1) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150℃, tSC: 10 μs; (10)Power dissipation, TC = 25℃ Ptot: 178 W; (11)Operating junction temperature, Tj: -40 to +150℃; (12)Storage temperature, Tstg: -55 to +150℃; (13)Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260℃.
Features
H20T120 features: (1)Short circuit withstand time-10μs; (2)Designed for: Soft Switching Applications; Induction Heating; (3)Trench and Fieldstop technology for 1200 V applications offers: very tight parameter distribution; high ruggedness, temperature stable behavior; easy parallel switching capability due to positive temperature coefficient in VCE(sat); (4)Very soft, fast recovery anti-parallel EmCon HE diode; (5)Low EMI; (6)Application specific optimisation of inverse diode.
Diagrams
