Product Summary
The IRF9630 is a Third generation Power MOSFET from Vishay, provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the IRF9630 contribute to its wide acceptance throughout the industry.
Parametrics
IRF9630 absolute maximum ratings: (1)Continuous drain current, VGS@ -10V, ID@ Tc= 25℃: -6.5A; (2)Continuous drain current, VGS@ -10V, ID@ Tc= 100℃: -4A; (3)Pulse drain current, IDM: -26A; (4)Power dissipation, PD@ Tc= 25℃: 74W; (5)Linear derating factor: 0.59W/℃; (6)Gate-to-source voltage, VGS: ±20V; (7)Single pulse avalanche energy, EAS: 500MJ; (8)Avalanche currenT, IAR: -6.4A; (9)Repetitive avalanche energy, EAR: 7.4MJ; (10)Peak diode recovery dv/dt, dv/dt: -5.0V/ns; (11)Operating junction and storage temperature range, TJ, TSTG: -55 to +150℃; (12)Soldering temperature, for 10 seconds: 300(1.6mm from case)℃\Mounting torque, 6-32 or M3 screw: 10lbf·in(1.1 N·m).
Features
IRF9630 (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)P-Channel; (4)Fast Switching; (5)Ease of Paralleling; (6)Simple Drive Requirements.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF9630 |
Vishay/Siliconix |
MOSFET P-Chan 200V 6.5 Amp |
Data Sheet |
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IRF9630, SiHF9630 |
Other |
Data Sheet |
Negotiable |
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IRF9630PBF |
Vishay/Siliconix |
MOSFET P-Chan 200V 6.5 Amp |
Data Sheet |
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IRF9630_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB |
Data Sheet |
Negotiable |
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IRF9630S |
Vishay/Siliconix |
MOSFET P-Chan 200V 6.5 Amp |
Data Sheet |
Negotiable |
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IRF9630L |
MOSFET P-CH 200V 6.5A TO-262 |
Data Sheet |
Negotiable |
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IRF9630SPBF |
Vishay/Siliconix |
MOSFET P-Chan 200V 6.5 Amp |
Data Sheet |
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IRF9630STRLPBF |
Vishay/Siliconix |
MOSFET P-Chan 200V 6.5 Amp |
Data Sheet |
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