Product Summary

The IXK42 is an N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET.

Parametrics

IXK42 absolute maximum ratings: (1)VDSS, TVJ = 25℃ to 150℃: 600 V; (2)VGS: ±20 V; (3)ID25, TC = 25℃: 75A; (4)ID90, TC = 90℃: 50A; (5)ID puls, pulse drain current, tp limited by TJmax: 250 A; (6)EAS, ID = 10 A; L = 36 mH TC = 25℃: 1.8J; (7)EAR, ID = 20 A; L = 5 mH, TC = 25℃: 1mJ; (8)dv/dt: VDS < VDSS; IF < 100A, TVJ = 125℃: 6 V/ns, |diF /dt| < 100A/μs.

Features

IXK42 features: (1)miniBLOC package; (2)Electrically isolated copper base; (3)Low coupling capacitance to the heatsink for reduced EMI; (4)High power dissipation due to AlN ceramic substrate; (5)International standard package SOT-227; (6)Easy screw assembly ; (7)Fast CoolMOS power MOSFET; (8)3rd generation; (9)High blocking capability; (10)Low on resistance; (11)Avalanche rated for unclamped inductive switching (UIS); (12)Low thermal resistance due to reduced chip thickness; (13)Enhanced total power density.

Diagrams

IXK42 block diagram