(Hong Kong)
Product Summary
The XP151A11BOMR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the XP151A11BOMR can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Applications are (1)Notebook PCs; (2)Cellular and portable phones; (3)On-board power supplies; (4)Li-ion battery systems.
Parametrics
XP151A11BOMR absolute maximum ratings: (1)Storage Temperature: -55 ~ 150°C; (2)Reverse Drain Current: 1A; (3)Continuous Channel Power Dissipation: 0.5W; (4)Channel Temperature: 150°C; (5)Drain - Source Voltage: 30V; (6)Gate - Source Voltage: 20V; (7)Drain Current (DC): 1A; (8)Drain Current (Pulse): 4A.
Features
XP151A11BOMR features: (1)Low on-state resistance : Rds (on)= 0.12Ω ( Vgs = 10V ): Rds (on)= 0.17Ω ( Vgs = 4.5V ); (2)Ultra high-speed switching; (3)Gate Protect Diode Built-in; (4)Operational Voltage : 4.5V; (5)High density mounting : SOT-23.
Diagrams
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 XP151A11BOMR |
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Data Sheet |
Negotiable |
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