AM29LV640DU90RPCF

Product Summary

The AM29LV640DU90RPCF is a 64 Mbit, 3.0 Volt (3.0 V to 3.6 V) single power supply flash memory device organized as 4,194,304 words. Data appears on DQ0-DQ15. The AM29LV640DU90RPCF is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. You can also program the AM29LV640DU90RPCF in standard EPROM programmers. Access times of 90 and 120 ns are available for applications where VIO ≥ VCC. An access time 120 ns are available for applications where VIO < VCC. The AM29LV640DU90RPCF is offered in 48-pin TSOP, 56-pin SSOP, 63-ball Fine-Pitch BGA and 64-ball Fortified BGA packages. To eliminate bus contention, each device has separate chip enable, write enable (WE#), and output enable (OE#) controls.

Parametrics

AM29LV640DU90RPCF absolute maximum ratings: (1)Storage temperature plastic packages: –65°C to +150°C; (2)Ambient temperature with power applied: –65°C to +125°C; (3)Voltage with respect to ground, VCC (Note 1): –0.5 V to +4.0 V; VIO: –0.5 V to +5.5 V; A9, OE#, ACC, and RESET# (Note 2): –0.5 V to +12.5 V; All other pins (Note 1): –0.5 V to VCC +0.5 V; (4)Output short circuit current (Note 3): 200 mA.

Features

AM29LV640DU90RPCF features: (1)Single power supply operation: 3.0 to 3.6 volt read, erase, and program operations; (2)VersatileIO control: Device generates output voltages and tolerates data input voltages on the DQ input/outputs as determined by the voltage on VIO; (3)High performance: Access times as fast as 90 ns; (4)Manufactured on 0.23 μm process technology; (5)CFI (Common Flash Interface)compliant: Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices; (6)SecSi (Secured Silicon)Sector region: 128-word sector for permanent, secure identification through an 8-word random Electronic Serial Number; May be programmed and locked at the factory or by the customer; Accessible through a command sequence; (7)Ultra low power consumption (typical values at 3.0 V, 5 MHz): 9 mA typical active read current; 26 mA typical erase/program current; 200 nA typical standby mode current.

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