Product Summary

The apt10086bvr is a new generation of high voltage N-Channel enhancement mode power MOSFET. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOSV also achieves faster switching speeds through optimized gate layout.

Parametrics

apt10086bvr absolute maximum ratings: (1)VDSS Drain-Source Voltage: 1000Volts; (2)ID Continuous Drain Current @ TC = 25°C: 13Amps; (3)IDM Pulsed Drain Current: 52Amps; (4)VGS Gate-Source Voltage Continuous: ±30Volts; (5)VGSM Gate-Source Voltage Transient: ±40Volts; (6)PD Total Power Dissipation @ TC = 25°C: 370Watts; (7)Linear Derating Factor: 2.96W/℃; (8)TJ,TSTG Operating and Storage Junction Temperature Range: -55 to 150℃; (9)TL Lead Temperature: 0.063" from Case for 10 Sec.: 300℃; (10)IAR Avalanche Current 1 (Repetitive and Non-Repetitive): 13Amps; (11)EAR Repetitive Avalanche Energy: 30mJ; (12)EAS Single Pulse Avalanche Energy: 1300mJ.

Features

apt10086bvr features: (1)Faster Switching; (2)100% Avalanche Tested; (3)Lower Leakage; (4)Popular TO-247 Package.

Diagrams

apt10086bvr package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
APT10086BVR
APT10086BVR
Other

Data Sheet
Negotiable 
APT10086BVRG
APT10086BVRG

MOSFET N-CH 1000V 13A TO-247
Data Sheet
0-30: $10.31