Product Summary
The apt5016bfll is a low loss, high voltage, N-Channel enhancement mode power MOSFET. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
and Qg. The apt5016bfll combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT’s patented metal gate structure.
Parametrics
apt5016bfll absolute maximum ratings: (1)Drain-Source Voltage: 500V; (2)Continuous Drain Current @ TC = 25°C: 30A; (3)Pulsed Drain Current: 120A; (4)Gate-Source Voltage Continuous: ±30V; (5)Gate-Source Voltage Transient: ±40V; (6)Total Power Dissipation @ TC = 25°C: 329W; (7)Linear Derating Factor: 2.63W/°C; (8)Operating and Storage Junction Temperature Range: -55 to 150°C.
Features
apt5016bfll features: (1)Lower Input Capacitance; (2)Increased Power Dissipation; (3)Lower Miller Capacitance; (4)Easier To Drive; (5)Lower Gate Charge, Qg; (6)TO-247 or Surface Mount D3PAK Package.
Diagrams
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![]() APT5016BFLL |
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![]() APT5016BFLLG |
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![]() MOSFET N-CH 500V 30A TO-247 |
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