Product Summary

The blf8g10ls-160 is a 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. It is applicated for RF power amplifiers for W-CDMA base stations and multi carrier applications in the 920 MHz to 960 MHz frequency range.

Parametrics

blf8g10ls-160 absolute maximum ratings: (1)VDS drain-source voltage: 65 V; (2)VGS gate-source voltage: -0.5 +13 V; (3)Tstg storage temperature: -65 +150℃; (4)Tj junction temperature: 200℃.

Features

blf8g10ls-160 features: (1)Excellent ruggedness; (2)High efficiency; (3)Low Rth providing excellent thermal stability; (4)Designed for broadband operation (920 MHz to 960 MHz); (5)Lower output capacitance for improved performance in Doherty applications; (6)Designed for low memory effects providing excellent pre-distortability; (7)Internally matched for ease of use; (8)Integrated ESD protection; (9)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).

Diagrams

blf8g10ls-160 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF8G10LS-160,112
BLF8G10LS-160,112
NXP Semiconductors
Transistors RF MOSFET Power PWR LDMOS TRANSISTOR
Data Sheet
0-41: $50.39
41-60: $50.39
60-100: $46.24
BLF8G10LS-160,118
BLF8G10LS-160,118
NXP Semiconductors
Transistors RF MOSFET Power PWR LDMOS TRANSISTOR
Data Sheet
0-68: $50.39
68-100: $46.24
BLF8G10LS-160V,118
BLF8G10LS-160V,118
NXP Semiconductors
Transistors RF MOSFET Power 960MHz 65V 19.7dB
Data Sheet
0-69: $55.65
69-100: $55.65
BLF8G10LS-160V,112
BLF8G10LS-160V,112
NXP Semiconductors
Transistors RF MOSFET Power 960MHz 65V 19.7dB
Data Sheet
0-41: $55.65