Product Summary

The blv33 is an NPN silicon RF power transistor. It is designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz.

Parametrics

blv33 absolute maximum ratings: (1)IC: 10 A; (2)VCB: 60 V; (3)VCE: 35 V; (4)PDISS: 140 W @ TC = 25 ℃; (5)TJ: -65 ℃ to +200 ℃; (6)TSTG: -65 ℃ to +150 ℃; (7)θJC: 1.5 ℃/W.

Features

blv33 features: (1)Gold Metalization; (2)Internal Input Matching; (3)Omnigold Metalization System.

Diagrams

blv33 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLV33
BLV33
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $70.13
1-10: $64.35
10-25: $57.75
25-50: $51.15
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLV30
BLV30
Other

Data Sheet
Negotiable 
BLV31
BLV31
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80
BLV32F
BLV32F
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $57.38
1-10: $52.65
10-25: $47.25
25-50: $41.85
BLV33
BLV33
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $70.13
1-10: $64.35
10-25: $57.75
25-50: $51.15
BLV34
BLV34
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $52.20
1-10: $43.50
10-25: $39.15
25-50: $34.80