(Hong Kong)
Product Summary
The bsm300ga120dn2fs-e3256 is an IGBT Power Module.
Parametrics
bsm300ga120dn2fs-e3256 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current, IC: 430A; (5)Pulsed collector current, tp = 1 ms, ICpuls: 860A; (6)Power dissipation per IGBT: 2500W; (7)Chip temperature Tj: + 150 ℃; (8)Storage temperature Tstg: -40 to + 125℃; (9)Thermal resistance, chip case RthJC≤ 0.05 K/W; (10)Diode thermal resistance, chip case RthJCD≤ 0.125K/W; (11)Insulation test voltage, t = 1min. Vis: 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec; (15)IEC climatic category, DIN IEC 68-1: 40 / 125 / 56sec.
Features
bsm300ga120dn2fs-e3256 features: (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
