(Hong Kong)
Product Summary
The bss110 is a P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. The applications of the bss110 include Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers.
Parametrics
bss110 absolute maximum ratings: (1)VDS, drain-source voltage (DC): -50 V; (2)VGSO, gate-source voltage (DC): ±20 V; (3)VGSth, gate-source threshold voltage: -2 V; (4)ID, drain current (DC): -170 mA; (5)RDSon drain-source on-state resistance: 10 Ω; (6)Ptot, total power dissipation: 830 mW.
Features
bss110 features: (1)Low threshold voltage; (2)Direct interface to C-MOS, TTL, etc.; (3)High speed switching; (4)No secondary breakdown.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BSS110 |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
|
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|
BSS110_D27Z |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
|
||||
|
BSS110_L34Z |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
|
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