Product Summary

The cep83a3 is an N-Channel Enhancement Mode Field Effect Transistor.

Parametrics

cep83a3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30 V; (2)Gate-Source Voltage, VGS: ±20 V; (3)Drain Current-Continuous, ID: 100 A; (4)Drain Current-Pulsed, IDM: 400 A; (5)Maximum Power Dissipation @ TC = 25 ℃, Derate above 25 ℃, PD: 100 W, 0.67 W/℃; (6)Single Pulsed Avalanche Energy, EAS: 875 mJ; (7)Single Pulsed Avalanche Current, IAS: 35 A; (8)Operating and Store Temperature Range TJ,Tstg: -55 to 175 ℃.

Features

cep83a3 features: (1)30 V, 100 A, RDS(ON) = 5.3 mΩ, @VGS = 10 V; (2)Super high dense cell design for extremely low RDS(ON); (3)High power and current handing capability; (4)Lead free product is acquired; (5)TO-220 & TO-263 package.

Diagrams

cep83a3 block diagram

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