Product Summary
The fda69n25 is an N-Channel UniFETTM MOSFET. It is based on planar stripe and DMOS technology. The fda69n25 is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as PFC, FPD TV power, ATX and lighting ballasts.
Parametrics
fda69n25 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 250 V; (2)VDS(Avalanche) Repetitive Avalanche Voltage: 300 V; (3)ID Drain Current Continuous (TC = 25℃): 69 A; (4)ID Drain Current Continuous (TC = 100℃): 44.2 A; (5)IDM Drain Current Pulsed: 276 A; (6)VGSS Gate-Source Voltage: ± 30 V; (7)EAS Single Pulsed Avalanche Energy: 1894 mJ; (8)IAR Avalanche Current: 69 A; (9)EAR Repetitive Avalanche Energy: 48 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (11)PD Power Dissipation (TC = 25℃): 480 W; (12)PD Power Dissipation Derate above 25℃: 3.84 W/℃; (13)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃; (14)TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.
Features
fda69n25 features: (1)RDS(on) = 41 mΩ (Max.) @ VGS = 10 V, ID = 34.5 A; (2)Low Gate Charge (Typ. 77 nC); (3)Low Crss (Typ. 84 pF).
Diagrams
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![]() FDA69N25 |
![]() Fairchild Semiconductor |
![]() MOSFET 250V N-Channel MOSFET |
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![]() FDA620009 |
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![]() OSC 106.25MHZ 3.3V SMD |
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![]() FDA620010 |
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![]() OSC 106.25MHZ 3.3V SMD |
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![]() FDA62N28 |
![]() Fairchild Semiconductor |
![]() MOSFET 300V 59A NCH MOSFET |
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![]() Negotiable |
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![]() FDA69N25 |
![]() Fairchild Semiconductor |
![]() MOSFET 250V N-Channel MOSFET |
![]() Data Sheet |
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![]() FDA620008 |
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![]() OSC 106.25MHZ 3.3V SMD |
![]() Data Sheet |
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![]() FDA620007 |
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![]() OSC 106.25MHZ 2.5V SMD |
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