(Hong Kong)
Product Summary
The fdc6000nz is a Dual N-Channel 2.5V Specified PowerTrench MOSFET. It is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V to 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. The applications of the fdc6000nz are Battery management/Charger Application, Load switch.
Parametrics
fdc6000nz absolute maximum ratings: (1)Drain-Source Voltage: 20 V; (2)VGSS Gate-Source Voltage:±12 V; (3)ID Drain Current-Continuous: 7.3 A, Pulsed: 20 A; (4)PD Power Dissipation for Dual Operation: 1.6 W; (5)Power Dissipation for Single Operation: 1.8 W; (6)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +150 °C.
Features
fdc6000nz features: (1)ESD protection diode (note 3); (2)High performance trench technology for extremely low RDS(ON); (3)FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDC6000NZ |
Fairchild Semiconductor |
MOSFET Dual N-Channel 2.5V Spec PowerTrench |
Data Sheet |
Negotiable |
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|
FDC6000NZ_F077 |
Fairchild Semiconductor |
MOSFET 2.5V DUAL N-CH |
Data Sheet |
Negotiable |
|
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