Product Summary

The fga90n33atdtu is a 330V, 90A PDP Trench IGBT. Using Novel the fga90n33atdtu Technology, Fairchild’s new series of the fga90n33atdtu offer the optimum performance for PDP applications where low conduction and switching losses are essential. The application of the fga90n33atdtu includes PDP System.

Parametrics

fga90n33atdtu absolute maximum ratings: (1)VCES, Collector to Emitter Voltage: 330 V; (2)VGES, Gate to Emitter Voltage: ±30 V; (3)IC, Collector Current: 90 A; (4)IC pulse(1), Pulsed Collector Current: 220 A; (5)IC pulse(2), Pulsed Collector Current: 330 A; (6)PD, Maximum Power Dissipation: 223 W; (7)TJ, Operating Junction Temperature: -55 to +150 ℃; (8)Tstg, Storage Temperature Range: -55 to +150 ℃; (9)TL, Maximum Lead Temp. for soldering: 300 ℃.

Features

fga90n33atdtu features: (1)High current capability; (2)Low saturation voltage: VCE(sat)=1.1V @ IC = 20A; (3)High input impedance; (4)Fast switching; (5)RoHS compliant.

Diagrams

fga90n33atdtu block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FGA90N33ATDTU
FGA90N33ATDTU

Fairchild Semiconductor

IGBT Transistors 330V 90A PDP Trench

Data Sheet

0-1: $1.54
1-25: $1.37
25-100: $1.24
100-250: $1.10
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FGA90N30DTU
FGA90N30DTU

Fairchild Semiconductor

IGBT Transistors TBD

Data Sheet

Negotiable 
FGA90N30TU
FGA90N30TU

Fairchild Semiconductor

IGBT Transistors TBD

Data Sheet

Negotiable 
FGA90N33AT
FGA90N33AT

Other


Data Sheet

Negotiable 
FGA90N33ATD
FGA90N33ATD

Other


Data Sheet

Negotiable 
FGA90N33ATDTU
FGA90N33ATDTU

Fairchild Semiconductor

IGBT Transistors 330V 90A PDP Trench

Data Sheet

0-1: $1.54
1-25: $1.37
25-100: $1.24
100-250: $1.10
FGA90N33ATTU
FGA90N33ATTU

Fairchild Semiconductor

IGBT Transistors 330V 90A PDP Trench

Data Sheet

0-1: $1.45
1-25: $1.17
25-100: $1.05
100-250: $0.94