Product Summary
The flc257mh-8 is a C-Band Power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
Parametrics
flc257mh-8 absolute maximum ratings: (1)Drain-Source Voltage VDS: 15V; (2)Gate-Source Voltage VGS: -5V; (3)Total Power Dissipation PT: 15W; (4)Storage Temperature Tstg: -65 to +175℃; (5)Channel Temperature Tch: 175℃.
Features
flc257mh-8 features: (1)High Output Power: P1dB = 34.0dBm(Typ.); (2)High Gain: G1dB = 8.0dB(Typ.); (3)High PAE: ηadd = 35%(Typ.); (4)ProvenReliability; (5)Hermetic Metal/Ceramic Package.
Diagrams
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![]() FLC257MH-6 |
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