Product Summary
The fqnl2n50bta is an N-Channel enhancement mode power field effects transistors which is produced using Fairchild’s proprietary, planar stripe, DMOS technology. The fqnl2n50bta advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The fqnl2n50bta is well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Parametrics
fqnl2n50bta absolute maximum ratings: (1)VDSS: 500 v; (2)ID: 0.35 a; (3)IDM: 1.4 a; (4)VGSS: ± 30 v; (5)IAR: 0.35 a; (6)EAR: 0.15 mj; (7)dv/dt: 4.5 v/ns; (8)PD: 1.5 w; (9)TJ, TSTG: -55 to 150 ℃; (10)TL: 300 ℃.
Features
fqnl2n50bta features: (1)0.35A, 500V, RDS(on) = 5.3 @VGS = 10 V; (2)Low gate charge ( typical 6.0 nC); (3)Low Crss ( typical 4.0 pF); (4)Fast switching; (5)Improved dv/dt capability.
Diagrams
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![]() FQNL2N50BTA |
![]() Fairchild Semiconductor |
![]() MOSFET 500V N-Channel QFET |
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![]() FQNL1N50B |
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![]() FQNL1N50BBU_Q |
![]() Fairchild Semiconductor |
![]() MOSFET 500V Single |
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![]() Negotiable |
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![]() FQNL2N50B |
![]() Other |
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![]() Data Sheet |
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![]() FQNL2N50BTA |
![]() Fairchild Semiconductor |
![]() MOSFET 500V N-Channel QFET |
![]() Data Sheet |
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![]() FQNL2N50BBU_Q |
![]() Fairchild Semiconductor |
![]() MOSFET 500V Single |
![]() Data Sheet |
![]() Negotiable |
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![]() FQNL2N50BBU |
![]() Fairchild Semiconductor |
![]() MOSFET 500V Single |
![]() Data Sheet |
![]() Negotiable |
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