(Hong Kong)
Product Summary
The irf130 is a power MOSFET transistor. The efficient geometry and unique processing of this latest“State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The irf130 also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Parametrics
irf130 absolute maximum ratings: (1)continuous drain current: 9.0A; (2)max. power dissipation: 75W; (3)gate-to-source voltage: ±20 V; (4)single pulse avalanche energy: 75 mJ; (5)avalanche current: 14A; (6)operating junction storage temperature range: -55 to 150°C.
Features
irf130 features: (1)repetitive avalanche ratings; (2)dynamic dv/dt rating; (3)hermetically sealed; (4)simple drive requirements; (5)ease of paralleling.
Diagrams
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 IRF130 |
Other |
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Data Sheet |
Negotiable |
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IRF1302 |
Other |
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Data Sheet |
Negotiable |
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IRF1302L |
Other |
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Data Sheet |
Negotiable |
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IRF1302PbF |
International Rectifier |
MOSFET N-CH 20V 180A TO-220AB |
Data Sheet |
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IRF1302S |
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MOSFET N-CH 20V 174A D2PAK |
Data Sheet |
Negotiable |
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IRF130SMD |
Other |
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Data Sheet |
Negotiable |
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