Product Summary

The irfp4768 is a HEXFET Power MOSFET. The applications of the irfp4768 include high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

Parametrics

irfp4768 absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 93A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 66A; (3)Pulsed Drain Current, IDM: 370A; (4)PD @TC = 25℃ Maximum Power Dissipation W; (5)Linear Derating FactorL: 3.4 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Peak Diode Recovery, dv/dt: 24 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (9)Soldering Temperature, for 10 seconds (1.6mm from case): 300℃; (10)Mounting torque, 6-32 or M3 screw: 10lbfin (1.1Nm).

Features

irfp4768 features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.

Diagrams

irfp4768 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFP4768PBF
IRFP4768PBF
International Rectifier
MOSFET MOSFT 250V 83A 21mOhm 195nC Qg
Data Sheet
0-1: $5.42
1-25: $3.97
25-100: $3.14
100-250: $3.02
IRFP4768-PBF
IRFP4768-PBF
Other

Data Sheet
Negotiable