(Hong Kong)
Product Summary
The 2SC5196 is an NPN triple diffused type device from Toshiba Semiconductor.
Parametrics
2SC5196 absolute maximum ratings: (1)Collector-Emitter Voltage, VCBO: 80V; (2)Collector-Emitter Voltage, VCEO: 80V; (3)Emitter-Base Voltage, VEBO: 5V; (4)Collector Current-Continuous, IC: 6A; (5)Base Current-Continuous, IB: 0.6A; (6)Collector Power Dissipation @TC≤25℃, PC: 60W; (7)Junction Temperature, TJ: 150℃; (8)Storage Temperature, Tstg: -55 to 150℃.
Features
2SC5196 features: (1)Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 5A; (2)Good Linearity of hFE; (3)Complement to Type 2SA1939.
Diagrams
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 2SC5196 |
Other |
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Data Sheet |
Negotiable |
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2SC5000 |
Other |
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Data Sheet |
Negotiable |
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2SC5001TLQ |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3 |
Data Sheet |
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2SC5001TLR |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 20V 10A |
Data Sheet |
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2SC5002 |
Other |
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Data Sheet |
Negotiable |
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2SC5003 |
Other |
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Data Sheet |
Negotiable |
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2SC5004 |
Other |
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Data Sheet |
Negotiable |
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