(Hong Kong)
Product Summary
The irgp4066epbf is an insulated gate bipolar transistor.
Parametrics
irgp4066epbf absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current: 140 A; (3)IC @ TC = 100℃ Continuous Collector Current: 90 A; (4)INOMINAL Nominal Current: 75 A; (5)ICM Pulse Collector Current, VGE = 15V: 225 A; (6)ILM Clamped Inductive Load Current, VGE = 20V: 300 A; (7)VGE Continuous Gate-to-Emitter Voltage: ±20 V; (8)Transient Gate-to-Emitter Voltage: ±30 V; (9)PD @ TC = 25℃ Maximum Power Dissipation: 454 W; (10)PD @ TC = 100℃ Maximum Power Dissipation: 227 W; (11)TJ Operating Junction: -55 to +175℃; (12)TSTG Storage Temperature Range: -55 to +175℃; (13)Soldering Temperature, for 10 sec.: 300℃ (0.063 in. (1.6mm) from case); (14)Mounting Torque, 6-32 or M3 Screw: 10 lbf·in (1.1 N·m); (15)RθJC Thermal Resistance Junction-to-Case: 0.33℃/W; (16)RθCS Thermal Resistance, Case-to-Sink (flat, greased surface): 0.24℃/W; (17)RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount): 40℃/W.
Features
irgp4066epbf features: (1)Low VCE (ON) Trench IGBT Technology; (2)Low Switching Losses; (3)Maximum Junction Temperature 175 ℃; (4)5 μs short circuit SOA; (5)Square RBSOA; (6)100% of The Parts Tested for ILM; (7)Positive VCE (ON) Temperature Coefficient; (8)Tight Parameter Distribution; (9)Lead Free Package.
Diagrams
