Product Summary

The k6x1008c2d-bf70 is a 128Kx8 bit Low Power full CMOS Static RAM. The k6x1008c2d-bf70 is fabricated by SAMSUNG’s advanced CMOS process technology. The families of the k6x1008c2d-bf70 support verious operating temperature ranges and have various package types for user flexibility of system design. The families of the k6x1008c2d-bf70 also support low data retention voltage for battery back-up operation with low data retention current.

Parametrics

k6x1008c2d-bf70 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN,VOUT: -0.5 to VCC+0.5V; (2)Voltage on Vcc supply relative to Vss, VCC: -0.3 to 7.0 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150 ℃; (5)Operating Temperature, TA: 0 to 70 ℃.

Features

k6x1008c2d-bf70 features: (1)Process Technology: Full CMOS; (2)Organization: 128K × 8; (3)Power Supply Voltage: 4.5 to 5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-DIP-600.

Diagrams

k6x1008c2d-bf70 block diagram