(Hong Kong)
Product Summary
The nes1823p-150 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. The nes1823p-150 is capable of delivering 140 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The nes1823p-150 employs 0.9 mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NECs stringent quality and control procedures.
Parametrics
nes1823p-150 absolute maximum ratings: (1)Drain to Source Voltage VDS: 19 V; (2)Gate to Source Voltage VGSO: -7 V; (3)Gate to Drain Voltage VGDO: -22 V; (4)Drain Current ID: 76 A; (5)Gate Current IG: 440 mA; (6)Total Power Dissipation Ptot: 270 W; (7)Channel Temperature Tch: 175 °C; (8)Storage Temperature Tstg: -65 to +175 °C.
Features
nes1823p-150 features: (1)Push-pull type N-channel GaAs MES FET; (2)VDS = 12.0 V operation; (3)High output power: Pout = 140 W TYP.; (4)High linear gain: GL = 11 dB TYP.; (5)High power added efficiency: hadd = 43 % TYP. @ VDS = 12.0 V, IDset = 6.0 A (total), f = 2.20 GHz.
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