(Hong Kong)
Product Summary
The pd85035-e is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6V in common source mode at frequencies of up to 1 GHz. The PD85035-E boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The PD85035-E’s superior linearity performance makes it an ideal solution for car mobile radio.
Parametrics
pd85035-e absolute maximum ratings: (1)V(BR)DSS Drain-source voltage: 40 V; (2)VGS Gate-source voltage: -0.5 to +15 V; (3)ID Drain current: 8 A; (4)PDISS Power dissipation (@ TC = 70°C): 95 W; (5)TJ Max. operating junction temperature: 165 °C; (6)TSTG Storage temperature: -65 to +150 °C.
Features
pd85035-e features: (1)Excellent thermal stability; (2)Common source configuration; (3)POUT = 35W with 14.9dB gain @ 870MHz / 13.6V; (4)Plastic package; (5)ESD protection; (6)In compliance with the 2002/93/EC european directive.
Diagrams
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 PD85035-E |
STMicroelectronics |
MOSFET POWER R.F. N-Ch Trans |
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