Product Summary

The ph1214-100el is a radar pulsed power transistor.

Parametrics

ph1214-100el absolute maximum ratings: (1)Collector-Emitter Voltage VCES: 70 V; (2)Emitter-Base Voltage VEBO: 3.0 V; (3)Collector Current (Peak)IC: 14.1 A; (4)Total Power Dissipation @ +45 °C PTOT: 214 W; (5)Storage Temperature TSTG: -65 to +200 °C; (6)Junction Temperature Tj: 200 °C.

Features

ph1214-100el features: (1)NPN Silicon Microwave Power Transistor; (2)Common Base Configuration; (3)Broadband Class C Operation; (4)High Efficiency Interdigitated Geometry; (5)Diffused Emitter Ballasting Resistors; (6)Gold Metalization System; (7)Internal Input and Output Impedance Matching; (8)Hermetic Metal/Ceramic Package.

Diagrams

ph1214-100el pin connection