(Hong Kong)
Product Summary
The s29gl032n11ffis4 is a 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The s29gl032n11ffis4 is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The s29gl032n11ffis4 is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The s29gl032n11ffis4 can be programmed either in the host system or in standard EPROM programmers.
Parametrics
s29gl032n11ffis4 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65 ℃ to +150 ℃; (2)Ambient Temperature with Power Applied: –65 ℃ to +125 ℃; (3)Voltage with Respect to Ground, VCC (Note 1): –0.5 V to +4.0 V; (4)Output Short Circuit Current (Note 3): 200 mA.
Features
s29gl032n11ffis4 features: (1)Advanced Sector Protection: offers Persistent Sector Protection and Password Sector Protection; (2)Program Suspend & Resume: read other sectors before programming operation is completed; (3)Erase Suspend & Resume: read/program other sectors before an erase operation is completed; (4)Data# polling & toggle bits provide status; (5)CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices; (6)Unlock Bypass Program command reduces overall multiple-word; programming time; (7)WP#/ACC input accelerates programming time for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models; (8)Hardware reset input (RESET#) resets device; (9)Ready/Busy# output (RY/BY#) detects program or erase cycle completion.
Diagrams
