SST29VF040-70-4C-NHE

sst29vf040-70-4c-nhe, Small-Sector Flash, -2.0V to VDD+2.0V, 50 mA, PLCC, Silicon Storage Technology, Inc

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Price:: US $2.30~2.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	2.50 / Piece
101 ~ 500 :	2.40 / Piece
501 ~ 1000 :	2.30 / Piece

PartNumber:: SST29VF040-70-4C-NHE

Brand:: Silicon Storage Technology, Inc - SST | Pack: | D/C:

Availability:: Supply Ability: 8000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-08-18

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Part Number:SST29VF040-70-4C-NHE
US $2.30 - 2.50
Quantity:

piece

Product Summary

The sst29vf040-70-4c-nhe is a Small-Sector Flash manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell of the sst29vf040-70-4c-nhe designs and thick-oxides tunneling injector attain better reliability and manufacturability compared with alternate approaches. The sst29vf040-70-4c-nhe devices write (Program or Erase) with a 4.5-5.5V power supply. The sst29vf040-70-4c-nhe devices write (Program or Erase) with a 2.7-3.6V power supply. The sst29vf040-70-4c-nhe conforms to JEDEC standard pin assignments for ×8 memories.

Parametrics

sst29vf040-70-4c-nhe absolute maximum ratings: (1)Temperature Under Bias: -55 to +125 ℃; (2)Storage Temperature: -65 to +150 ℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (＜20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (TA = 25 ℃): 1.0W; (7)Through Hole Lead Soldering Temperature (10 Seconds): 300 ℃; (8)Surface Mount Solder Reflow Temperature: 260 for 10 seconds; (9)Output Short Circuit Current: 50 mA.

Features

sst29vf040-70-4c-nhe features: (1)Organized as 256K × 8 / 512K × 8; (2)Single Voltage Read and Write Operations; (3)Superior Reliability Endurance: 100,000 Cycles (typical); (4)Low Power Consumption, Active Current: 10 mA (typical); (5)Sector-Erase Capability; (6)Fast Read Access Time: 55 ns for sst29vf040-70-4c-nhe; (7)Latched Address and Data; (8)Fast Erase and Byte-Program, Sector-Erase Time: 18 ms (typical); (9)Automatic Write Timing; (10)End-of-Write Detection; (11)TTL I/O Compatibility for sst29vf040-70-4c-nhe; (12)CMOS I/O Compatibility for sst29vf040-70-4c-nhe; (13)JEDEC Standard; (14)Packages Available: 32-lead PLCC; (15)All non-Pb (lead-free) devices are RoHS compliant.