Product Summary

The wfp75n75 is an N-Channel Power MOSFET. It is produced using Wisdom s advancedplanar stripe, DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics. The wfp75n75 is well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

wfp75n75 absolute maximum ratings: (1)VDSS, Drain to Source Voltage: 75V; (2)ID, Continuous Drain Current(@TC = 25°C): 75A; Continuous Drain Current(@TC = 100°C): 52.5A; (3)IDM, Drain Current Pulsed: 300A; (4)VGS, Gate to Source Voltage: ±20 V; (5)EAS, Single Pulsed Avalanche Energy: 1350mJ; (6)EAR, Repetitive Avalanche Energy: 19.0mJ; (7)dv/dt, Peak Diode Recovery dv/dt: 7.0V/ns; (8)PD, Total Power Dissipation(@TC = 25 °C): 190W; (9)TSTG, TJ, Operating Junction Temperature & Storage Temperature: - 55 ~ 175°C; (10)TL, Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds: 300°C.

Features

wfp75n75 features: (1)RDS(on) (Max 0.017 Ω )@VGS=10V; (2)Gate Charge (Typical 85nC); (3)Improved dv/dt Capability, High Ruggedness; (4)100% Avalanche Tested; (5)Maximum Junction Temperature Range (175°C).

Diagrams

wfp75n75 block diagram