2SD1978

Original New Hitachi Silicon NPN Epitaxial Transistor, 120V, 3.0A, 0.9W, 2sd1978

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Price:: US $2.20~2.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	2.50 / Piece
101 ~ 800 :	2.40 / Piece
801 ~ 1600 :	2.20 / Piece

PartNumber:: 2SD1978

Brand:: Hitachi Ltd - Hitachi | Pack: | D/C:

Availability:: Supply Ability: 8000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-23

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Part Number:2SD1978
US $2.20 - 2.50
Quantity:

piece

Product Summary

The 2sd1978 is an Original New Hitachi Silicon NPN Epitaxial Transistor. It is suitable for (1)Low frequency power amplifier; (2)Complementary pair with 2SB1387.

Parametrics

2sd1978 absolute maximum ratings: (1)Collector to base voltage, VCBO: 120V; (2)Collector to emitter voltage, VCEO: 120V; (3)Emitter to base voltage, VEBO: 7V; (4)Collector current, IC: 1.5A; (5)Collector peak currentic (peak): 3.0A; (6)Collector power dissipation, PC: 0.9W; (7)Junction temperature, Tj: 150 °C; (8)Storage temperature, Tstg: –55 to +150 °C; (9)E to C diode forward current, ID: 1.5A.

Features

2sd1978 features: (1)Collector to base breakdown voltage, V(BR)CBO: 120V; (2)Collector to emitter breakdown voltage, V(BR)CEO: 120V; (3)Emitter to base breakdown voltage, V(BR)EBO: 7V; (4)Collector cutoff current, ICBO: 1.0 μA; ICEO: 10 μA; (5)DC current transfer ratio, hFE: 2000—30000; (6)Collector to emitter saturation voltage, VCE(sat)1: 1.5V; VCE(sat)2: 2.0V; (7)Base to emitter saturation voltage, VBE(sat)1: 2.0V; VBE(sat)2: 2.5V; (8)E to C diode forward voltage, VD: 3.0V.