Product Summary

The BGY110F is a four-stage UHF amplifier module in a SOT246 package. The module consists of four NPN silicon planar transistor chips, mounted together with matching and bias circuit components on a metallized ceramic substrate. The applications of the BGY110F include Hand-held transmitting equipment operating in the 824 to 849 MHz, 872 to 905 MHz, 890 to 915 MHz and 902 to 928 MHz frequency ranges.

Parametrics

BGY110F absolute maximum ratings: (1)VS1, DC supply voltage: 10 V; (2)VS2, DC supply voltage: 10 V; (3)VS3, DC supply voltage: 10 V; (4)VC, DC control voltage: 4.5 V; (5)+Vo, RF output terminal voltage: 25 V; (6)PD, input drive power: 3 mW; (7)PL, load power: 2.25 W; (8)Tstg, storage temperature: -40 to +100℃; (9)Tmb, mounting base temperature: 90℃.

Features

BGY110F features: (1)7.2 V nominal supply voltage; (2)1.7 W output power; (3)Easy control of output power by DC voltage.

Diagrams

BGY110F block diagram

BGY1085A
BGY1085A

NXP Semiconductors

RF Amplifier CATV P/P AMP 18.5dB

Data Sheet

Negotiable 
BGY120B
BGY120B

Other


Data Sheet

Negotiable 
BGY122A
BGY122A

Other


Data Sheet

Negotiable 
BGY122B
BGY122B

Other


Data Sheet

Negotiable 
BGY132
BGY132

Other


Data Sheet

Negotiable 
BGY120A
BGY120A

Other


Data Sheet

Negotiable