FDD8424H

FDD8424H, enhancement mode Power MOSFET, 40 V, 20A, 35W, TO

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Price:: US $3.00~5.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 500 :	5.00 / Piece
501 ~ 1000 :	4.00 / Piece
1001 ~ 3000 :	3.00 / Piece

PartNumber:: FDD8424H

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 13+

Availability:: Supply Ability: 1/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-06-03

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Part Number:FDD8424H
US $3.00 - 5.00
Quantity:

piece

Product Summary

The FDD8424H dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductors advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Applications are InverterH-Bridge, H-Bridge.

Parametrics

FDD8424H absolute maximum ratings: (1)VDS Drain to Source Voltage: 40 V; (2)VGS Gate to Source Voltage: ±20 V; (3)ID Drain Current - Continuous (Package Limited): 20A; (4)PD Power Dissipation for Single Operation TC = 25°C: 35W; (5)EAS Single Pulse Avalanche Energy: 33 mJ; (6)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +150 °C.

Features

FDD8424H features: (1)Max rDS(on)= 24mΩ at VGS = 10V, ID = 9.0A; (2)Max rDS(on)= 30mΩ at VGS = 4.5V, ID = 7.0A; (3)Max rDS(on)= 54mΩ at VGS = -10V, ID = -6.5A; (4)Max rDS(on)= 70mΩ at VGS = -4.5V, ID = -5.6A; (5)Fast switching speed; (6)RoHS Compliant.