(Hong Kong)
Product Summary
The FM1208S-200CC is a FRAM memory. The FM1208S-200CC is a bytewide ferroelectric RAM, or FRAM product, organized as 512 x 8. FRAM memory products from Ramtron combine the read/write characteristics of semiconductor RAM with the nonvolatile retention of magnetic storage. The FM1208S-200CC is manufactured in a CMOS technology with the addition of integrated thin film ferroelectric storage cells developed and patented by Ramtron.
Parametrics
FM1208S-200CC absolute maximum ratings: (1)Ambient storage or Operating temperature: 0 to +70℃; (2)Voltage on any pin with respect to ground: -1.0 to +7.0V.
Features
FM1208S-200CC features: (1)4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8; (2)CMOS Technology with Integrated Ferroelectric Storage Cells; (3)Fully Synchronous Operation, 200ns Read Access, 400ns Read/Write Cycle Time, 10 Billion (1010) Cycle Read/Write Endurance; (4)On Chip Data Protection Circuit; (5)10 Year Data Retention without Power; (6)Single 5 Volt ±10% Supply; (7)Low Power Consumption, Active Current: 10mA; Standby Current: lOOpA; (8)CMOS/TTL Compatible I/O Pins; (9)24 Pin DIP and SOP Packages; (10)0-70℃ Ambient Operating Temperature Range.
Diagrams
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 FM1216ME/I H-5 |
NXP Semiconductors |
RF Modules FM TUNER |
Data Sheet |
Negotiable |
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FM1233ECS3X |
Fairchild Semiconductor |
Supervisory Circuits 2.88V Gen Circuit active Low Precision |
Data Sheet |
Negotiable |
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FM1233DDS3X |
Fairchild Semiconductor |
Supervisory Circuits 4.38V Gen Circuit Precision Reset |
Data Sheet |
Negotiable |
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FM1233ACS3X |
Fairchild Semiconductor |
Supervisory Circuits 2.88V Gen Circuit aL Bidirectional PR |
Data Sheet |
Negotiable |
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FM1233EDS3X |
Fairchild Semiconductor |
Supervisory Circuits 2.72V Gen Circuit active Low Precision |
Data Sheet |
Negotiable |
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FM1233BDS3X |
Fairchild Semiconductor |
Supervisory Circuits 4.38V Gen Circuit aL Bidirectional PR |
Data Sheet |
Negotiable |
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