Product Summary

The IRLML2502TRPBF is an N-Channel MOSFET. The IRLML2502TRPBF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized the IRLML2502TRPBF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

Parametrics

IRLML2502TRPBF absolute maximum ratings: (1)VDS Drain- Source Voltage: 20 V; (2)ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V: 4.2A; (3)ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V: 3.4 A; (4)IDM Pulsed Drain Current : 33A; (5)PD @TA = 25°C Power Dissipation :1.25W; (6)PD @TA = 70°C Power Dissipation :0.8W; (7)Linear Derating Factor: 0.01 W/°C; (8)VGS Gate-to-Source Voltage: ± 12 V; (9)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 °C.

Features

IRLML2502TRPBF features: (1)Ultra Low On-Resistance; (2)N-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching; (7)Lead-Free; (8)Halogen-Free.

Diagrams

IRLML2502TRPBF pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLML2502TRPBF
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25-100: $0.14
100-250: $0.12
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