(Hong Kong)
Product Summary
The bfy50 is an NPN medium power transistor. The bfy50 is in a TO-39 metal package. Applications of the bfy50 include: General purpose industrial applications.
Parametrics
bfy50 absolute maximum ratings: (1) collector-base voltage VCBO: 80V (open emitter) ; (2) collector-emitter voltage VCEO: 35V (open base) ; (3) emitter-base voltage VEBO: 6V (open collector) ; (4) collector current (DC) IC: 1A; (5) peak collector current ICM: 1A; (6) peak base current IBM: 100mA; (7) total power dissipation Ptot: 800mW (Tamb≤25°C) , 5W (Tcase≤25°C) , 2.86W (25°C <Tcase<100°C) ; (8) storage temperature Tstg: -65 to +150°C ; (9) junction temperature Tj: 200°C; (10) operating ambient temperature Tamb: -65 to +150°C.
Features
bfy50 features: (1) High current (max. 1A) ; (2) Low voltage (max. 35V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BFY50 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN General Purpose |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
BFY50 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN General Purpose |
Data Sheet |
Negotiable |
|
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|
BFY51 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN General Purpose |
Data Sheet |
Negotiable |
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|
BFY52 |
Other |
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Data Sheet |
Negotiable |
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