Product Summary

The fda33n25 is an N-Channel MOSFET. The device is well suited for high efficient switching mode power supplies and active power factor correction.

Parametrics

fda33n25 absolute maximum ratings: (1)Drain to Source Voltage: 250 V; (2)VGSS Gate to Source Voltage: ±30 V; (3)ID Drain Current -Continuous (TC = 25°C): 33 A, Continuous (TC = 100°C): 21A; (4)IDM Drain Current - Pulsed: 132 A; (5)EAS Single Pulsed Avalanche Energy: 918 mJ; (6)IAR Avalanche Current: 33 A; (7)EAR Repetitive Avalanche Energy: 24.6 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD Power Dissipation (TC = 25°C): 245 W, Derate above 25°C: 1.96 W/°C; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150°C.

Features

fda33n25 features: (1)RDS(on)= 0.088Ω ( Typ.)@ VGS = 10V, ID = 16.5A; (2)Low gate charge ( Typ. 36nC); (3)Low Crss ( Typ. 35pF); (4)Fast switching; (5)Improved dv/dt capability; (6)RoHS compliant.

Diagrams

fda33n25 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDA33N25
FDA33N25
Fairchild Semiconductor
MOSFET 250V N-Channel
Data Sheet
0-1: $1.16
1-25: $1.03
25-100: $0.91
100-250: $0.80
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDA33N25
FDA33N25
Fairchild Semiconductor
MOSFET 250V N-Channel
Data Sheet
0-1: $1.16
1-25: $1.03
25-100: $0.91
100-250: $0.80
FDA38N30
FDA38N30
Fairchild Semiconductor
MOSFET UniFET1 300V N-chan MOSFET
Data Sheet
0-1: $1.96
1-25: $1.76
25-100: $1.60
100-250: $1.45