FDN358P

FDN358P, logic level enhancement mode power field effect transistor, 5A, 20 V, 0.5 W, SOT-23

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Price:: US $2.30~2.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	2.50 / Piece
101 ~ 500 :	2.40 / Piece
501 ~ 1000 :	2.30 / Piece

PartNumber:: FDN358P

Brand:: Fairchild Semiconductor - Fairchild | Pack: | D/C:

Availability:: Supply Ability: 8000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-08-18

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Part Number:FDN358P
US $2.30 - 2.50
Quantity:

piece

Product Summary

The fdn358p is a SuperSOT-3 P-Channel logic level enhancement mode power field effect transistor. The fdn358p is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The fdn358p is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Parametrics

fdn358p absolute maximum ratings: (1)VDSS Drain-Source Voltage: -30 V; (2)VGSS Gate-Source Voltage: ±20 V; (3)ID Drain/Output Current - Continuous: -1.5 A, - Pulsed: -5A; (4)PD Maximum Power Dissipation: 0.5 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150 °C.

Features

fdn358p features: (1)-1.5 A, -30 V, RDS(ON)= 0.125 W @ VGS = -10 V, RDS(ON)= 0.20 W @ VGS = - 4.5 V; (2)High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability; (3)High density cell design for extremely low RDS(ON); (4)Exceptional on-resistance and maximum DC current capability.