Product Summary

The g4pc50u is an insulated gate bipolar transistor with ultrafast soft recovery diode.

Parametrics

g4pc50u absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current: 55A; (3)IC @ TC = 100℃ Continuous Collector Current: 27A; (4)ICM Pulsed Collector Current: 220 A; (5)ILM Clamped Inductive Load Current: 220A; (6)IF @ TC = 100℃ Diode Continuous Forward Current: 25A; (7)IFM Diode Maximum Forward Current: 220A; (8)VGE Gate-to-Emitter Voltage: ± 20 V; (9)PD @ TC = 25℃ Maximum Power Dissipation: 200W; (10)PD @ TC = 100℃ Maximum Power Dissipation: 78W; (11)TJ Operating Junction and Storage Temperature Range: -55 to +150℃.

Features

g4pc50u features: (1)UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode; (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; (3)IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO-247AC package.

Diagrams

g4pc50u pin connection