(Hong Kong)
Product Summary
The ice8260-s is an N-Channel Enhancement Mode MOSFET.
Parametrics
ice8260-s absolute maximum ratings: (1)Continuous drain current, ID: 8 A; (2)Pulsed drain current, ID, pulse: 24 A; (3)Avalanche energy, single pulse, EAS: 340 mJ; (4)Avalanche current, repetitive, IAR: 4 A; (5)MOSFET dv/dt ruggedness, dv/dt: 50 V/ns; (6)Gate source voltage, VGS: ±20 V; (7)Power dissipation, Ptot: 35 W; (8)Operating and storage temperature, Tj, Tstg: -55 to +150 ℃; (9)Mounting torque: 50 Ncm.
Features
ice8260-s features: (1)Low rDS(on); (2)Ultra Low Gate Charge; (3)High dv/dt capability; (4)High Unclamped Inductive Switching (UIS) capability; (5)High peak current capability; (6)Increased transconductance performance; (7)Optimized design for high performance power systems.
Diagrams
