Product Summary
The ipb90n06s4l-04 is an OptiMOS-T2 Power-Transistor.
Parametrics
ipb90n06s4l-04 absolute maximum ratings: (1)Continuous drain current, ID: 90 A; (2)Pulsed drain current, ID,pulse: 360 A; (3)Avalanche energy, single pulse, EAS: 331 mJ; (4)Avalanche current, single pulse, IAS: 90 A; (5)Gate source voltage, VGS: ±16 V; (6)Power dissipation, Ptot: 150 W; (7)Operating and storage temperature, Tj,Tstg: -55 to +175 ℃; (8)IEC climatic category; DIN IEC 68-1: 55/175/56.
Features
ipb90n06s4l-04 features: (1)N-channel - Enhancement mode; (2)AEC Q101 qualified; (3)MSL1 up to 260℃ peak reflow; (4)175℃ operating temperature; (5)Green Product (RoHS compliant); (6)100% Avalanche tested.
Diagrams
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![]() MOSFET N-Channel 60V MOSFET |
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![]() IPB90N06S4-04 |
![]() Infineon Technologies |
![]() MOSFET N-Channel 60V MOSFET |
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![]() IPB90N06S4L-04 |
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![]() IPB90R340C3ATMA1 |
![]() Infineon Technologies |
![]() MOSFET COOL MOS |
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![]() IPB90N04S4-02 |
![]() Infineon Technologies |
![]() MOSFET N-Channel 40V MOSFET |
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