Product Summary

The irfz30a is a hexfet transistor. The irfz30a has expended its product base to serve the low voltage, very low RDS MOSEFT transistor requirements. International Rectfier’s highly efficient geometry and unique processing of the HEXFET have been combined to create the lowest on resistance per device performance. In addition to this feature all HEXFETs have documented reliability and parts per million quality.

Parametrics

irfz30a absolute maximum ratings: (1)VDS, Drain-Source Voltage: 50 V; (2)VDGR, Drain-Gate Voltage: 50 V; (3)LD @ TC = 25 ℃, Continuous Drain Current: 30 A; (4)LD @ TC = 100 ℃, Continuous Drain Current: 19 A; (5)LDM, Pulsad Drain Current: 80 A; (6)VGS, Gate-Source Voltage: ±20 V; (7)PD @ TC = 25 ℃, Max. Power Dissipation: 75 W; (8)LLM, Inductive Current, Clamped: 80 A; (9)TJ,TSTG, Operating Junction and Storage Temperature Range: -55 to 150 ℃; (10)Lead Temperature: 300 ℃.

Features

irfz30a features: (1)Exremely Low RDS; (2)Compact Plastic Package; (3)Fast Switching; (4)Low Drive Current; (5)Ease of Paralleling; (6)Excellent Temperature Stability; (7)Parts Per Million Quality.

Diagrams

irfz30a block diagram