Product Summary
The KSC5402DTF is a high voltage high speed power switch.
Parametrics
KSC5402DTF absolute maximum ratings: (1)VCBO, collector-base voltage: 1000 V; (2)VCEO, collector-emitter voltage: 450 V; (3)VEBO, emitter-base voltage: 12 V; (4)IC, collector current (DC): 2 A; (5)ICP, collector current (Pulse): 5 A; (6)IB, base current (DC): 1 A; (7)IBP, base current (Pulse): 2 A; (8)PC, power dissipation(TC=25°C): D-PAK: 30 W; TO-220: 50 W; (9)TJ, junction temperature: 150 °C; (10)TSTG, storage temperature: - 65 ~ 150 °C.
Features
KSC5402DTF features: (1)Wide safe operating area; (2)Built-in free wheeling diode; (3)Suitable for electronic ballast application; (4)Small Variance in storage time; (5)Two package choices; D-PAK or TO-220.
Diagrams
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![]() KSC5402DTF |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Silicon Transistor Planar Silicon Transistor |
![]() Data Sheet |
![]() Negotiable |
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![]() KSC5019 |
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![]() Negotiable |
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![]() KSC5019MBU |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
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![]() Negotiable |
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![]() KSC5019MTA |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Epitaxial Transistor |
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![]() KSC5019MTA_Q |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Epitaxial Transistor |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() KSC5019NTA |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN/10V/2A/Low(sat) |
![]() Data Sheet |
![]() Negotiable |
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![]() KSC5020 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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