(Hong Kong)
Product Summary
The M5K4116P-3 is a 65 536-word by 1 bit dynamic ram, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense ampolifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the 16-pin zigzag inline package configuration and an increase in system densities. The M5K4116P-3 operates on a 5V power supply using the on-chip substrate bias generator.
Parametrics
M5K4116P-3 absolute maximum ratings: (1)VCC supply voltage with respect to VSS: -1 to 7V; (2)VI input voltage with respect to VSS: -1 to 7V; (3)VO output voltage with respect to VSS: -1 to 7V; (4)IO output current: 50mA; (5)Pd power dissipation Ta=25℃: 700mW; (6)Topr operating free-air temperature range: 0 to 70℃; (7)Tstg storage temperature range: -65 to 150℃.
Features
M5K4116P-3 features: (1)high speed; (2)16 pin zigzag inline package; (3)single 5V ±10% supply; (4)low standby power dissipation: 22mW; (5)unlatched output enables two-dimensional chip selection and extended page boundary; (6)early-write operation gives common I/O capability; (7)read-modify-write, RAS-only refresh, and page-mode capabilites; (8)all input terminals have low input capaciatance and are directly TTL-compatible; (9)output is three-state and directly TTL-compatible; (10)128 refresh cycles every 2ms; (11)CAS controlled output allows hidden refresh; (12)output data can be held infinitely by CAS.
Diagrams
