Product Summary

The mj4032 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. The mj4032 is inteded for use in general purpose and amplifier applications. The applications of the mj4032 include general purpose switching, general purpose amplifiers.

Parametrics

mj4032 absolute maximum ratings: (1)VCBO, Collector-Base Voltage (IE = 0): 100 V; (2)VCEO, Collector-Emitter Voltage (IB = 0): 100 V; (3)VEBO, Emitter-Base Voltage (IC = 0): 5 V; (4)IC, Collector Current: 16 A; (5)IB, Base Current: 0.5 A; (6)Ptot, Total Dissipation at Tc ≤ 25 ℃: 150 W; (7)Tstg, Storage Temperature: -65 to 200 ℃; (8)Tj, Max. Operating Junction Temperature: 200 ℃.

Features

mj4032 features: (1)stmicroelectronics preferred salestypes; (2)complementary pnp - npn devices; (3)monolithic darlington configuration; (4)integrated antiparallel collector-emitter diode.

Diagrams

mj4032 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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MJ4032
MJ4032

STMicroelectronics

Transistors Darlington PNP Darlington Power

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJ4032
MJ4032

STMicroelectronics

Transistors Darlington PNP Darlington Power

Data Sheet

Negotiable 
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MJ4033

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STMicroelectronics

Transistors Darlington NPN Darlington Power

Data Sheet

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